MUN5136DW1T1G
onsemi
onsemi
TRANS 2PNP PREBIAS 0.25W SC88
$0.05
Available to order
Reference Price (USD)
9,000+
$0.04452
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with onsemi's MUN5136DW1T1G, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The MUN5136DW1T1G is widely used in lighting systems, portable electronics, and automotive accessories. onsemi's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the MUN5136DW1T1G is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Nexperia USA Inc.
PBLS6005D,115
Toshiba Semiconductor and Storage
RN4987,LXHF(CT
Panasonic Electronic Components
XP0611100L
Rohm Semiconductor
EMA3T2R
Rohm Semiconductor
EMG9T2R
Toshiba Semiconductor and Storage
RN2902FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4901FE,LXHF(CT
Toshiba Semiconductor and Storage
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage