EMH9T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W EMT6
$0.44
Available to order
Reference Price (USD)
8,000+
$0.12710
16,000+
$0.11890
24,000+
$0.11480
Exquisite packaging
Discount
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Discover the versatility of Rohm Semiconductor's EMH9T2R, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The EMH9T2R is widely used in IoT devices, medical equipment, and renewable energy systems. Rohm Semiconductor's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the EMH9T2R offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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