PQMH2Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN DFN1010B-6
$0.06
Available to order
Reference Price (USD)
5,000+
$0.06188
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PQMH2Z from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the PQMH2Z ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Nexperia USA Inc.'s PQMH2Z delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
Related Products
onsemi
SMUN5232DW1T1G
Diodes Incorporated
DDA143TH-7
Rohm Semiconductor
IMB10AT110
Toshiba Semiconductor and Storage
RN1606(TE85L,F)
onsemi
MUN5135DW1T1G
Rohm Semiconductor
EMD38T2R
onsemi
NSBA143EDP6T5G
Infineon Technologies
BCR35PNH6433XTMA1
Toshiba Semiconductor and Storage
RN1904,LXHF(CT
Toshiba Semiconductor and Storage