EPC2065
EPC
EPC
GAN FET 80V .0036OHM 8BUMP DIE
$3.50
Available to order
Reference Price (USD)
1+
$3.50000
500+
$3.465
1000+
$3.43
1500+
$3.395
2000+
$3.36
2500+
$3.325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the EPC2065 by EPC, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The EPC2065 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose EPC.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V
- FET Feature: Standard
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Fairchild Semiconductor
SSW2N60BTM
GeneSiC Semiconductor
GA05JT03-46
Diodes Incorporated
DMT10H025LSS-13
Infineon Technologies
AUIRFS4010TRL
STMicroelectronics
STS5N15F3
Infineon Technologies
IRFU5410PBF
Infineon Technologies
IPB180P04P4L02ATMA1
Rectron USA
RM8N650LD
IXYS
IXTR120P20T
STMicroelectronics