EPC2214
EPC
EPC
GANFET N-CH 80V 10A DIE
$1.69
Available to order
Reference Price (USD)
1+
$1.69000
500+
$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
Exquisite packaging
Discount
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Meet the EPC2214 by EPC, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The EPC2214 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose EPC.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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