EPC2215
EPC
EPC
GAN TRANS 200V 8MOHM BUMPED DIE
$6.44
Available to order
Reference Price (USD)
1+
$6.44000
500+
$6.3756
1000+
$6.3112
1500+
$6.2468
2000+
$6.1824
2500+
$6.118
Exquisite packaging
Discount
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The EPC2215 from EPC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to EPC's EPC2215 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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