EPC7014UBC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 60V 1A COTS 4UB
$209.48
Available to order
Reference Price (USD)
1+
$209.48000
500+
$207.3852
1000+
$205.2904
1500+
$203.1956
2000+
$201.1008
2500+
$199.006
Exquisite packaging
Discount
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Optimize your power electronics with the EPC7014UBC single MOSFET from EPC Space, LLC. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the EPC7014UBC combines cutting-edge technology with EPC Space, LLC's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +7V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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