F3L25R12W1T4B27BOMA1
Infineon Technologies
Infineon Technologies
MODULE IGBT 1200V EASY1B-2
$39.64
Available to order
Reference Price (USD)
24+
$30.28833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's F3L25R12W1T4B27BOMA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the F3L25R12W1T4B27BOMA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the F3L25R12W1T4B27BOMA1 power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 45 A
- Power - Max: 215 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
Related Products
Infineon Technologies
F1225R12KT4GBOSA1
Microchip Technology
APT50GF60JU2
Infineon Technologies
FS150R06KE3BOSA1
Infineon Technologies
DF150R12W1H3FB11BOMA1
Microchip Technology
APTGT100TL60T3G
Infineon Technologies
FZ1600R17KE3NOSA1
Microchip Technology
APTGT200TL60G
Infineon Technologies
FF450R12KT4HOSA1
Infineon Technologies
FD800R17KE3B2NOSA1
Infineon Technologies