FBG04N30BC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 40V30A COTS 4FSMD-B
$313.40
Available to order
Reference Price (USD)
1+
$313.40000
500+
$310.266
1000+
$307.132
1500+
$303.998
2000+
$300.864
2500+
$297.73
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FBG04N30BC single MOSFET from EPC Space, LLC. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust EPC Space, LLC's FBG04N30BC for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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