FCH190N65F-F085
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 650V 20.6A TO247-3
$3.33
Available to order
Reference Price (USD)
450+
$5.04664
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FCH190N65F-F085 from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's FCH190N65F-F085 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
onsemi
NTHS5445T1
Microchip Technology
APTM100UM45FAG
STMicroelectronics
STL45P3LLH6
onsemi
NTB12N50T4
Vishay Siliconix
SI7456DP-T1-GE3
onsemi
NTBL050N65S3H
Panasonic Electronic Components
FJ4B01110L1
onsemi
NVMFS5C430NLAFT1G
Rohm Semiconductor
SCT3017ALHRC11
IXYS