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FCP11N60N

onsemi
FCP11N60N Preview
onsemi
MOSFET N-CH 600V 10.8A TO220-3
$3.34
Available to order
Reference Price (USD)
1+
$3.17000
10+
$2.82600
100+
$2.31750
800+
$1.69570
1,600+
$1.58266
Exquisite packaging
Discount
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Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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