SCT3160KLGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 17A TO247N
$10.99
Available to order
Reference Price (USD)
1+
$10.19000
10+
$9.20200
30+
$8.77400
120+
$7.61842
270+
$7.27600
510+
$6.63400
1,020+
$5.99200
Exquisite packaging
Discount
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Optimize your power electronics with the SCT3160KLGC11 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCT3160KLGC11 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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