FD800R33KF2CNOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 3300V 9600W
$3,882.22
Available to order
Reference Price (USD)
1+
$1,950.73000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FD800R33KF2CNOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FD800R33KF2CNOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FD800R33KF2CNOSA1.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): -
- Power - Max: 9600 W
- Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 100 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS200R12KT4RPB11BPSA1
Infineon Technologies
FS450R17OE4BOSA1
Infineon Technologies
FS55MR12W1M1HB11NPSA1
Infineon Technologies
FS150R07N3E4_B11
Infineon Technologies
FD150R12RT4HOSA1
Infineon Technologies
FP25R12KS4CBOSA1
Infineon Technologies
FP50R12W2T7BPSA1
Infineon Technologies
FB20R06W1E3BOMA1
Fairchild Semiconductor
FMG2G75US60
Infineon Technologies