FP25R12KS4CBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 40A 230W
$94.13
Available to order
Reference Price (USD)
10+
$102.77500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Infineon Technologies's FP25R12KS4CBOSA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FP25R12KS4CBOSA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FP25R12KS4CBOSA1 module.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 230 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP50R12W2T7BPSA1
Infineon Technologies
FB20R06W1E3BOMA1
Fairchild Semiconductor
FMG2G75US60
Infineon Technologies
FS300R17KE4BOSA1
Infineon Technologies
FS50R06YE3BOMA1
Fairchild Semiconductor
FMG2G50US60
Microchip Technology
APT150GN120JDQ4
Infineon Technologies
FS300R12OE4BOSA1
Infineon Technologies
FF300R12ME3BOSA1
IXYS