FDB8441
onsemi
onsemi
MOSFET N-CH 40V 28A/120A TO263AB
$3.63
Available to order
Reference Price (USD)
1+
$3.63000
500+
$3.5937
1000+
$3.5574
1500+
$3.5211
2000+
$3.4848
2500+
$3.4485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FDB8441 by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FDB8441 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Micro Commercial Co
MCAC30N06Y-TP
onsemi
NTLUS3192PZTBG
Infineon Technologies
BSZ018NE2LSIATMA1
Fairchild Semiconductor
HUF75321S3ST
Infineon Technologies
IPP040N06N3GXKSA1
NXP Semiconductors
PMPB95ENEA/FX
Diodes Incorporated
DMN62D0U-13
Renesas Electronics America Inc
3SK323UG-TL-E
onsemi
2SJ655
Vishay Siliconix