FDC365P
onsemi
onsemi
MOSFET P-CH 35V 4.3A SUPERSOT6
$5.27
Available to order
Reference Price (USD)
3,000+
$0.50296
6,000+
$0.47782
15,000+
$0.45985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FDC365P single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDC365P combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
onsemi
5LP01SP
Diodes Incorporated
DMNH10H021SPSW-13
Rohm Semiconductor
R6030JNZ4C13
onsemi
MCH6431-TL-H
Infineon Technologies
IPB60R190C6ATMA1
Alpha & Omega Semiconductor Inc.
AOD66920
STMicroelectronics
STD180N4F6
Infineon Technologies
BSP135L6433
Vishay Siliconix
SUM70060E-GE3
onsemi