FDC6301N_G
onsemi
onsemi
MOSFET 2 N-CH 25V SUPERSOT6
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Enhance your circuit designs with the FDC6301N_G, a premium Transistors - FETs, MOSFETs - Arrays product from onsemi. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the FDC6301N_G delivers consistent and reliable operation. onsemi's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT™-6
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