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GWS4621L

Renesas Electronics America Inc
GWS4621L Preview
Renesas Electronics America Inc
MOSFET 2N-CH
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.8mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 10V
  • Power - Max: 3.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA, CSP
  • Supplier Device Package: 4-WLCSP (1.82x1.82)

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