FDD2572
onsemi
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
$2.26
Available to order
Reference Price (USD)
2,500+
$0.90563
5,000+
$0.87400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDD2572 by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDD2572 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FDFME3N311ZT
Harris Corporation
RFL1N15L
Taiwan Semiconductor Corporation
TSM80N950CP ROG
Panjit International Inc.
PJC138L_R1_00001
Nexperia USA Inc.
BUK7508-40B,127
GeneSiC Semiconductor
G2R120MT33J
Microchip Technology
APT1003RBLLG
Infineon Technologies
IPB80P03P4L07ATMA1
onsemi
FDB031N08
Infineon Technologies