FDI150N10
onsemi
onsemi
MOSFET N-CH 100V 57A I2PAK
$3.09
Available to order
Reference Price (USD)
1+
$2.32000
10+
$2.10200
100+
$1.70060
800+
$1.21198
1,600+
$1.11716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FDI150N10 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDI150N10 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Texas Instruments
CSD18543Q3AT
Texas Instruments
CSD17576Q5BT
Vishay Siliconix
SIHP15N80AE-GE3
Infineon Technologies
IPD12CN10NGATMA1
Diodes Incorporated
DMN67D8L-13
Infineon Technologies
IRL2505STRLPBF
onsemi
NVMFS5C420NLT1G
Alpha & Omega Semiconductor Inc.
AON6414A
Nexperia USA Inc.
PSMN1R0-40ULDX
onsemi