Shopping cart

Subtotal: $0.00

FDN028N20

onsemi
FDN028N20 Preview
onsemi
MOSFET N-CH 20V 6.1A SUPERSOT3
$0.56
Available to order
Reference Price (USD)
3,000+
$0.15925
6,000+
$0.14897
15,000+
$0.13870
30,000+
$0.13151
75,000+
$0.13076
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Microchip Technology

TP2104K1-G

Infineon Technologies

IPA60R125C6XKSA1

NXP Semiconductors

BUK7E3R1-40E,127

Rohm Semiconductor

RCX100N25

Texas Instruments

CSD16415Q5

Infineon Technologies

IPD50N04S408ATMA1

Renesas Electronics America Inc

NP60N06VDK-E1-AY

Infineon Technologies

SPW16N50C3FKSA1

Vishay Siliconix

IRFR9120PBF

Top