Shopping cart

Subtotal: $0.00

SPW16N50C3FKSA1

Infineon Technologies
SPW16N50C3FKSA1 Preview
Infineon Technologies
MOSFET N-CH 560V 16A TO247-3
$5.08
Available to order
Reference Price (USD)
1+
$4.13000
10+
$3.71100
240+
$3.08608
720+
$2.54460
1,200+
$2.18361
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 560 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3

Related Products

Vishay Siliconix

IRFR9120PBF

GeneSiC Semiconductor

G3R160MT17J

Nexperia USA Inc.

PMZ950UPELYL

Infineon Technologies

SPD02N60S5BTMA1

Nexperia USA Inc.

BUK7Y21-40EX

Fairchild Semiconductor

FCH190N65F-F085

Microchip Technology

APTM100UM45FAG

Top