FDN8601
onsemi
onsemi
MOSFET N-CH 100V 2.7A SUPERSOT3
$0.97
Available to order
Reference Price (USD)
3,000+
$0.38500
6,000+
$0.36575
15,000+
$0.35200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDN8601 by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDN8601 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Toshiba Semiconductor and Storage
SSM3K56FS,LF
Infineon Technologies
BSS670S2LH6433XTMA1
Fairchild Semiconductor
HUFA75345P3
Infineon Technologies
IRFHM3911TRPBF
onsemi
NTD4863N-35G
GeneSiC Semiconductor
G3R450MT17J
Alpha & Omega Semiconductor Inc.
AOWF11N60
Infineon Technologies
IPI072N10N3 G
Vishay Siliconix
SQ4080EY-T1_GE3
onsemi