G3R450MT17J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 9A TO263-7
$8.52
Available to order
Reference Price (USD)
1+
$8.52000
500+
$8.4348
1000+
$8.3496
1500+
$8.2644
2000+
$8.1792
2500+
$8.094
Exquisite packaging
Discount
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The G3R450MT17J single MOSFET from GeneSiC Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the G3R450MT17J is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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