FDP050AN06A0
onsemi
onsemi
MOSFET N-CH 60V 18A/80A TO220-3
$3.15
Available to order
Reference Price (USD)
1+
$3.07000
10+
$2.77100
100+
$2.22700
500+
$1.73212
1,000+
$1.43518
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDP050AN06A0 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDP050AN06A0 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
onsemi
NVTYS003N04CLTWG
Microchip Technology
MCP87090T-U/MF
Fairchild Semiconductor
5HP01M-TL-E-FS
Alpha & Omega Semiconductor Inc.
AO4476A
Toshiba Semiconductor and Storage
TK6Q60W,S1VQ
Nexperia USA Inc.
PSMN021-100YLX
Texas Instruments
CSD25402Q3AT
Renesas Electronics America Inc
NP161N04TUG-E1-AY
Goford Semiconductor
G60N10T
onsemi