FDS6900AS-G
onsemi
onsemi
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
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The FDS6900AS-G by onsemi is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the FDS6900AS-G offers superior functionality and longevity. Trust onsemi to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
- Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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