FDS9953A
Fairchild Semiconductor

Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 2
$0.00
Available to order
Reference Price (USD)
2,500+
$0.39918
5,000+
$0.37312
12,500+
$0.36009
25,000+
$0.35298
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the FDS9953A from Fairchild Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the FDS9953A stands out for its reliability and efficiency. Fairchild Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC