FF1000R17IE4S4BOSA2
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 1390A AGPRIME3-1
$619.76
Available to order
Reference Price (USD)
1+
$619.76000
500+
$613.5624
1000+
$607.3648
1500+
$601.1672
2000+
$594.9696
2500+
$588.772
Exquisite packaging
Discount
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The FF1000R17IE4S4BOSA2 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FF1000R17IE4S4BOSA2 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FF1000R17IE4S4BOSA2 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1390 A
- Power - Max: 6250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-PRIME3-1
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