FF1200R17KE3NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE VCES 1700V 1200A
$1,699.20
Available to order
Reference Price (USD)
2+
$1,064.66000
Exquisite packaging
Discount
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Engineered for excellence, the FF1200R17KE3NOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FF1200R17KE3NOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FF1200R17KE3NOSA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 595000 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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