FF600R12KT4HOSA1
Infineon Technologies
Infineon Technologies
62MM POWER MODULE 1200 V WITH IG
$300.24
Available to order
Reference Price (USD)
1+
$300.24000
500+
$297.2376
1000+
$294.2352
1500+
$291.2328
2000+
$288.2304
2500+
$285.228
Exquisite packaging
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The FF600R12KT4HOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FF600R12KT4HOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FF600R12KT4HOSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
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