MSCGTQ100HD65C1AG
Microchip Technology
Microchip Technology
PM-IGBT-TFS-SBD~-SP1F
$133.91
Available to order
Reference Price (USD)
1+
$133.91000
500+
$132.5709
1000+
$131.2318
1500+
$129.8927
2000+
$128.5536
2500+
$127.2145
Exquisite packaging
Discount
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Microchip Technology's MSCGTQ100HD65C1AG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the MSCGTQ100HD65C1AG enables higher power density in MRI gradient amplifiers. Choose Microchip Technology for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 80 A
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1
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