FF900R12IE4VBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 900A 5100W
$539.02
Available to order
Reference Price (USD)
3+
$548.44667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FF900R12IE4VBOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FF900R12IE4VBOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FF900R12IE4VBOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FF900R12IE4VBOSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 5100 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
IXYS
IXXN110N65C4H1
Infineon Technologies
IM240M6Z1BALMA1
Infineon Technologies
FS3L25R12W2H3B11BPSA1
Infineon Technologies
FZ2400R17HP4B2BOSA2
Infineon Technologies
FF900R12IP4VBOSA1
Infineon Technologies
FF450R33T3E3BPSA1
Infineon Technologies
FZ800R12KF5NOSA1
Infineon Technologies
FP50R12KT3BOSA1
Infineon Technologies
FS300R12KE4BOSA1
Infineon Technologies