FGA50N100BNTD2
onsemi
onsemi
IGBT 1000V 50A 156W TO3P
$0.00
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Reference Price (USD)
1+
$8.81000
10+
$7.98500
Exquisite packaging
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Experience top-tier performance with the FGA50N100BNTD2 Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the FGA50N100BNTD2 ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
- Power - Max: 156 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 257 nC
- Td (on/off) @ 25°C: 34ns/243ns
- Test Condition: 600V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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