IRG4RC10KPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 9A 38W DPAK
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Upgrade your power management systems with the IRG4RC10KPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG4RC10KPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG4RC10KPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
- Power - Max: 38 W
- Switching Energy: 160µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: 11ns/51ns
- Test Condition: 480V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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