FGB20N6S2
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$0.60
Available to order
Reference Price (USD)
400+
$1.87530
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGB20N6S2 from Fairchild Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose FGB20N6S2 for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 28 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
- Power - Max: 125 W
- Switching Energy: 25µJ (on), 58µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 7.7ns/87ns
- Test Condition: 390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
Related Products
IXYS
IXYA8N250CHV
Renesas Electronics America Inc
RJP3049DPK-80#T2
IXYS
IXYK100N120C3
onsemi
FGH30N60LSDTU
IXYS
IXYH12N250CV1HV
onsemi
STB1081L3
Alpha & Omega Semiconductor Inc.
AOK20B120D1
Rohm Semiconductor
RGTV60TS65DGC11
STMicroelectronics
STGW19NC60HD
onsemi