FGD3N60LSDTM-T-FS
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 6A, 600V, N-CHANNEL
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Enhance your electronic projects with the FGD3N60LSDTM-T-FS Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGD3N60LSDTM-T-FS ensures precision and reliability. Fairchild Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGD3N60LSDTM-T-FS for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 25 A
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
- Power - Max: 40 W
- Switching Energy: 250µJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 12.5 nC
- Td (on/off) @ 25°C: 40ns/600ns
- Test Condition: 480V, 3A, 470Ohm, 10V
- Reverse Recovery Time (trr): 234 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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