FGH25N120FTDS
onsemi
onsemi
IGBT 1200V 50A 313W TO247
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$8.26000
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The FGH25N120FTDS by onsemi is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the FGH25N120FTDS delivers robust performance. onsemi's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate FGH25N120FTDS into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: 313 W
- Switching Energy: 1.42mJ (on), 1.16mJ (off)
- Input Type: Standard
- Gate Charge: 169 nC
- Td (on/off) @ 25°C: 26ns/151ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 535 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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