FGH40T65SQD-F155
onsemi
onsemi
IGBT TRENCH/FS 650V 80A TO247-3
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Reference Price (USD)
450+
$2.68291
Exquisite packaging
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Enhance your electronic projects with the FGH40T65SQD-F155 Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGH40T65SQD-F155 ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGH40T65SQD-F155 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 238 W
- Switching Energy: 138µJ (on), 52µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 16.4ns/86.4ns
- Test Condition: 400V, 10A, 6Ohm, 15V
- Reverse Recovery Time (trr): 31.8 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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