FGH60N60UFDTU-F085
onsemi
onsemi
IGBT 600V 120A 298W TO247
$0.00
Available to order
Reference Price (USD)
1+
$6.54000
10+
$5.90800
450+
$4.67153
900+
$4.25933
1,350+
$3.70974
Exquisite packaging
Discount
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Enhance your electronic projects with the FGH60N60UFDTU-F085 Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGH60N60UFDTU-F085 ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGH60N60UFDTU-F085 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
- Power - Max: 298 W
- Switching Energy: 2.47mJ (on), 810µJ (off)
- Input Type: Standard
- Gate Charge: 192 nC
- Td (on/off) @ 25°C: 29ns/138ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 76 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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