RJH1CF6RDPQ-80#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 1200V 55A 227.2W TO247
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the RJH1CF6RDPQ-80#T2 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RJH1CF6RDPQ-80#T2 delivers consistent and reliable operation. Trust Renesas Electronics America Inc's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
- Power - Max: 227.2 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
Infineon Technologies
SGB02N60ATMA1
IXYS
IXGA7N60CD1
Infineon Technologies
IRG4PH40UD-EPBF
IXYS
IXSP10N60B2D1
IXYS
IXBF10N300C
STMicroelectronics
STGBL6NC60DIT4
IXYS
IXBT20N360HV
Infineon Technologies
IRG4PH50UDPBF
IXYS
IXRH40N120
Infineon Technologies