FGH60T65SQD-F155
onsemi
onsemi
IGBT TRENCH/FS 650V 120A TO247-3
$7.10
Available to order
Reference Price (USD)
1+
$4.57000
10+
$4.12100
450+
$3.23576
900+
$2.91813
1,350+
$2.48352
Exquisite packaging
Discount
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Upgrade your power management systems with the FGH60T65SQD-F155 Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGH60T65SQD-F155 provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGH60T65SQD-F155 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 333 W
- Switching Energy: 227µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 20.8ns/102ns
- Test Condition: 400V, 15A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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