SGB15N120ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 30A 198W TO263-3
$4.59
Available to order
Reference Price (USD)
1,000+
$2.91913
Exquisite packaging
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The SGB15N120ATMA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the SGB15N120ATMA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 52 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
- Power - Max: 198 W
- Switching Energy: 1.9mJ
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 18ns/580ns
- Test Condition: 800V, 15A, 33Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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