FGP90N30TU
Fairchild Semiconductor

Fairchild Semiconductor
IGBT, 90A, 300V, N-CHANNEL
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Upgrade your power management systems with the FGP90N30TU Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGP90N30TU provides reliable and efficient operation. Fairchild Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGP90N30TU for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 130 A
- Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
- Power - Max: 192 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3