RJH60D0DPM-00#T1
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 45A 40W TO3PFM
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJH60D0DPM-00#T1 Single IGBT transistor by Renesas Electronics America Inc is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RJH60D0DPM-00#T1 provides consistent performance in varied conditions. Rely on Renesas Electronics America Inc's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
- Power - Max: 40 W
- Switching Energy: 230µJ (on), 290µJ (off)
- Input Type: Standard
- Gate Charge: 46 nC
- Td (on/off) @ 25°C: 40ns/80ns
- Test Condition: 300V, 22A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM
Related Products
onsemi
SGH80N60UFDTU
STMicroelectronics
STGWA30H60DFB
IXYS
IXGH45N120
IXYS
IXGT24N170
IXYS
IXGA30N60C3C1
SemiQ
GPA030A135MN-FDR
Infineon Technologies
IRG4BC20UD-S
IXYS
IXGP20N100
IXYS
IXGP12N100
Infineon Technologies