FII50-12E
IXYS
IXYS
IGBT H BRIDGE 1200V 50A I4PAK5
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with IXYS's FII50-12E, a top-tier Discrete Semiconductor Product in the IGBT arrays category. With built-in temperature monitoring and low EMI emissions, it s the preferred choice for cryogenic pumps and satellite power systems, proving indispensable in space exploration and scientific research applications.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™