FN4L4M-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PROGRAM ADAPTER
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc's FN4L4M-T1B-A redefines reliability in the Transistors - Bipolar (BJT) - Single, Pre-Biased category. With built-in bias resistors, this component accelerates prototyping while maintaining signal integrity. Key features include 1) 300mA collector current capacity 2) Wide operating temperature range (-55 C to +150 C) 3) RoHS compliance. Implement in motor control systems, sensor interfaces, or battery-powered devices for optimal results.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 Ohms
- Resistor - Emitter Base (R2): 22 Ohms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250ยต, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Nexperia USA Inc.
PDTC144EU/ZLX
onsemi
SMMUN2215LT1G-M01
onsemi
FJNS4209RTA
Nexperia USA Inc.
PDTA114EU/ZLX
Nexperia USA Inc.
PDTC124EU/ZLX
Diodes Incorporated
ADTA123JCAQ-13
Nexperia USA Inc.
PDTD123YT/APGVL
Micro Commercial Co
DTC144TSA-BP
Nexperia USA Inc.
PDTA143EU/ZLX
NXP USA Inc.