IXDN55N120D1
IXYS
IXYS
IGBT MOD 1200V 100A 450W SOT227B
$31.96
Available to order
Reference Price (USD)
1+
$30.70000
10+
$28.39800
30+
$26.09500
100+
$24.25300
250+
$22.25752
Exquisite packaging
Discount
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Optimize your power systems with IXYS's IXDN55N120D1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The IXDN55N120D1 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every IXDN55N120D1 module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 450 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 55A
- Current - Collector Cutoff (Max): 3.8 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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