FP35R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$61.76
Available to order
Reference Price (USD)
1+
$61.76000
500+
$61.1424
1000+
$60.5248
1500+
$59.9072
2000+
$59.2896
2500+
$58.672
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FP35R12W2T7B11BOMA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FP35R12W2T7B11BOMA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FP35R12W2T7B11BOMA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
- Current - Collector Cutoff (Max): 5.8 µA
- Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B-2
Related Products
Microchip Technology
APTGT600SK60G
Infineon Technologies
DF200R12W1H3B27BOMA1
Infineon Technologies
FS50R07N2E4B11BOSA1
Infineon Technologies
FS300R12OE4PNOSA1
Infineon Technologies
F3L100R07W2H3B11BPSA1
Infineon Technologies
FP75R17N3E4B11BPSA1
Littelfuse Inc.
MG12300D-BN2MM
Microchip Technology
APTGT75A60T1G
Infineon Technologies
FS150R12KE3BOSA1
Infineon Technologies