FP50R06W2E3BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 65A 175W
$61.03
Available to order
Reference Price (USD)
1+
$48.57000
10+
$45.31000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FP50R06W2E3BOMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FP50R06W2E3BOMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FP50R06W2E3BOMA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 175 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS450R17KE3BOSA1
Infineon Technologies
FF450R12KT4PHOSA1
Microchip Technology
APT80GP60J
Infineon Technologies
FP50R06W2E3B11BOMA1
Infineon Technologies
FP10R12W1T7B11BOMA1
Infineon Technologies
IFF600B12ME4PB11BPSA1
Infineon Technologies
FS100R12N2T4BPSA1
Infineon Technologies
FP15R12KE3GBPSA1
Microchip Technology
APTGT300DA60G
Infineon Technologies