FP7G50US60
Fairchild Semiconductor
Fairchild Semiconductor
IGBT
$26.08
Available to order
Reference Price (USD)
1+
$26.08000
500+
$25.8192
1000+
$25.5584
1500+
$25.2976
2000+
$25.0368
2500+
$24.776
Exquisite packaging
Discount
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Fairchild Semiconductor's FP7G50US60 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FP7G50US60 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Fairchild Semiconductor to deliver cutting-edge IGBT solutions with the FP7G50US60 power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EPM7
- Supplier Device Package: EPM7
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